S. Bashir, J.L. Liu
Texas A&M University-Kingsville,
United States
Keywords: atomic-layer engineering, ternary semiconductors, TRL-4 device demonstrator, power electronics, pilot manufacturing
Summary:
This presentation introduces a reproducible pathway for transitioning atomically engineered ternary semiconductors composed of boride, carbide, and chalcogenide composites from TRL-3 materials to TRL-4 device demonstrators. One family of these materials has been designed to meet the demands of next-generation microwave-absorbing systems operating under extreme thermal, electrical, and mechanical stress. One critical application area is microwave-absorbing devices (MADs), which are essential for wireless networks, radar systems, aerospace platforms, and defense electronics. Conventional MADs face persistent limitations in electromagnetic impedance matching, thermal tolerance, and bandwidth coverage, especially under high-temperature and high-field conditions. To address these challenges, a novel ternary TiB2-TiC-SiC composite was synthesized via molten salt-assisted carbothermal reduction. The resulting intercalated lamellar structure and engineered nano-interfaces enhanced electromagnetic absorption and thermal resilience. The composite demonstrated efficient broadband performance across 2-18 GHz, achieving a minimum reflection loss of -47.8 dB at 6.0 GHz (C-band) and a bandwidth of 3 GHz at <-10 dB reflection loss. These results were validated across n > 10 devices and achieved at a thickness of just 2.4 mm, offering a lightweight platform for converting electromagnetic energy into thermal energy. Additional green chemistry synthesis methods (sol-gel, solid-state, and chemical vapor deposition (CVD) were employed for stoichiometry control. These approaches enabled conformal coating and interface tuning, while in situ analytics and SPC-gated workflows ensured traceability and reproducibility. These workflows are version-controlled and CHIPS-aligned, supporting audit-ready data infrastructure. Compared to incumbent semiconductors such as Si, SiC, and GaN, which suffer from thermal bottlenecks, dielectric degradation, and fatigue under repeated stress, the engineered ternary composites delivered 20-30% performance gains. Key metrics include thermal conductivity > 90 W·m⁻¹·K⁻¹, dielectric strength > 30, and mechanical endurance improvement at about 15%, validated with statistical rigor (n > 10, 95% CI). This effort bridges materials innovation and device-level integration, demonstrating reproducible TRL-4 readiness through provenance-tagged datasets and milestone-gated validation. Modular synthesis and U.S.-centric sourcing support domestic supply chain resilience and cost-effective scale-up. Market applications span grid converters, EV inverters, aerospace RF systems, and industrial electronics. By integrating atomic-level engineering, scalable synthesis, and audit-ready workflows, this work establishes a CHIPS-aligned hub for resilient semiconductor innovation. It offers a validated platform for high-performance MAMs, enabling broader adoption in extreme-condition power systems and advancing U.S. leadership in advanced manufacturing, defense electronics, and sustainable energy infrastructure.