Short-Channel Low-Voltage MoS2 Memtransistors with High Gate-Tunability

T. T. Zeng, S. E. Liu, R. Wu, V. K. Sangwan, M. C. Hersam
Northwestern University,
United States

Keywords: two-dimensional, memtransistor, low-voltage, back-gated, neuromorphic computing


The rapid ascent of artificial intelligence in the digital era imposes unprecedented energy demands for supporting electronics hardware. Neuromorphic computing aims to revolutionize data processing and communication with brain-inspired paradigms of parallel processing, in-memory computing, and classification of analog signals at the edge. For neuromorphic hardware, two-dimensional memtransistors have shown to embody bio-realistic functionalities. However, memtransistors to date have not achieved sub-1 V operating voltage without compromising the gate-tunability. Here we report short-channel length (100-370 nm), low-voltage MoS2 memtransistors with field-effect tuning of low and high resistance states over four orders of magnitude. This is achieved by integrating a back-gate design with channel length and width (20 μm) that are smaller and larger respectively compared to average grain size (≈ 1 μm) of monolayer MoS2 grown by chemical vapor deposition. Finite-element simulations confirm enhanced electrostatic effects in the back-gated design compared to incumbent top-gated memtransistors that are critical for voltage reduction without compromising resistive switching and field-effect ON/OFF ratios.