TechConnect World 2020
Co-Located with Nanotech 2020Co-Located with Nanotech 2020 SBIR/STTRSBIR/STTR AI TechConnectAI TechConnect



Submit your Poster Abstract - due April 10

Please first review the information for authors — abstract submission guidelines.

Kai LiuMagneto-Ionic Control of Heterostructures and Interfaces
Kai Liu
McDevitt Chair in Physics, Georgetown University

Susan FullertonMonolayer electrolyte for all-solid-state non-volatile memory
Susan Fullerton
Assistant Professor & Faculty Fellow, University of Pittsburgh

Approaches based on nanoscale materials, engineering, and technology are changing the very nature of electronics and the essence of how electronic devices are manufactured.

The 13th annual Nanoelectronics Symposium will highlight novel materials, fabrication processes, devices, designs, and architectures: revealing and inspiring the future of electronics. Please join innovators from industry, academia, and government laboratories from around the world at this keynote event.

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Symposium Sessions

Wednesday July 1

8:30Electronics and Devices Keynote
1:30Carbon Nano Structures & Devices
4:00Carbon Nano Structures & Devices - Posters
4:00Nanoelectronics - Posters

Symposium Program

Wednesday July 1

8:30Electronics and Devices Keynote
Industrial Photonic Sensing Systems
L. Tsakalakos, GE Global Research, US
Revolutionizing sensing using quantum technologies
B. Young, AOSense, Inc., US
Monolayer electrolyte for all-solid-state non-volatile memory
S. Fullerton, University of Pittsburgh, US
Magneto-Ionic Control of Heterostructures and Interfaces
K. Liu, Georgetown University, US
Optically-Induced Circular Currents and Giant Inverse Faraday Effect in 2D Electron Liquid for Tunable Absorption of THz radiation
S.O. Potashin, V. Yu. Kachorovskii, M. Shur, Rensselaer Polytechnic Institute, US
Random Telegraph Noise Induced by Single-Charge Trap of Negative Capacitance MOSFETs with MFMIS and MFIS Structures
S. Reddy Kola, National Chiao Tung University, TW
Atomristors: Non-volatile Resistance Switching Behavior in 2D Monolayers and the Applications in Memory, RF Switch and Neuromorphic Computing
X. Wu, R. Ge, M. Kim, D. Akinwande, J.C. Lee, The University of Texas at Austin, US
Dependence of Breakdown Voltage on Passivation-Layer Thickness of Field-Plate AlGaN/GaN HEMTs
T. Iwamoto, D. Kubota, S. Akiyama, K. Horio, Shibaura Institute of Technology, JP
1:30Carbon Nano Structures & Devices
Session chair: Wolfgang S. Bacsa, University of Toulouse, France, Christopher Sims, NIST, US
Carbon Nanostructures for Energy Conversion and Storage: From Li-S battery, Supercapacitor, to Nitrogen Fixation
J. Huang, B.G. Sumpter, Oak Ridge National Laboratory, US
Nanoscale carbon for print-in-place electronics
A. Franklin, Duke University, US
Additive manufacturing of 3D architectures with 0D/1D/2D materials
K. Fu, University of Delaware, US
Lightweight Non-metal Electrical Conductor: Carbon Nanotube/Carbon Fibers with High Strength and Electrical Conductivity
S. Zhang, Yu. Dessureault, C. Jolowsky, A. Hao, J.G. Park, R. Liang, Florida State University, US
Highly Conductive Transparent Carbon Nanotube Thin Films
H. Li, Atom Inc, US
4:00Carbon Nano Structures & Devices - Posters
Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices
H. Li, Atom Inc, US
Examples of Classical and Nonclassical Symmetric Fullerenes
F.J. Sanchez-Bernabe, Universidad Autonoma Metropolitana, MX
Fabrication of Aligned and Random CNT films for flexible electronics, energy harvesting and artificial muscles
M.D. Lima, LINTEC of America, US
Natural Gas Conversion to Value-Added Carbon Materials Using Microwave Plasma Technology
R. Kumal, A. Gharpure, A. Mantri, K. Zeller, V. Viswanathan, G. Skoptsov, R. Vander Wal, Penn State University, US
On diamagnetic response of composite graphene and graphite nanostructures
A. Rzhevskii, S. Chahid, R. Dulal, S. Teknowijoyo, A. Gulian, Thermo Fisher Scientific, US
Theoretical Studies of Catalytic Mechanism of Electrolyte Additives for Cycle Life Improvement of Nanoporous Carbon-Based Li-S Battery
J. Huang, J. Zhou, B.G. Sumpter, J. Jakowski, P.R.C. Kent, C. Liang, S.C. Smith, Oak Ridge National Laboratory, US
Direct Laser-Induced Nanocarbon Formation on Flexible Polymers: Tailoring Porous and Fibrous Morphologies
M. Abdulhafez, M. Bedewy, University of Pittsburgh, US
Static and free vibration analysis of Functionally Graded Carbon Nanotubes reinforced composite nano plate
A. Harsha, S.J. Singh, Government Engineering College Bikaner, IN
4:00Nanoelectronics - Posters
Analysis of High Average Breakdown Fields between Gate and Drain in AlGaN/GaN HEMTs with High-k Passivation Layer
R. Tomita, S. Ueda, Y. Kawada, K. Horio, Shibaura Institute of Technology, JP
Frequency to Digital Converter
X. Liu, T. Ytterdal, M. Shur, Rensselaer Polytechnic Institute, US
IInfluence of Electron Interference Effects on Tunneling in 2D Semiconductor Nanostructures
V.A. Petrov, A.V. Nikitin, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, RU
Single GaN Nanowire Field Effect Transistor for Elevated Temperature Applications
M.A. Yildirim, K. Teker, Istanbul Sehir University, TR
Some problematic points in identification of bismuth impurity centers in floating-zone silicon irradiated with 15 MeV protons
N. Arutyunov, Martin Luther University Halle, IPLT-Institute of Electronics, Tashkent, UZ
Analysis of Lag Phenomena and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High-k Passivation Layer
K. Komoto, Y. Saito, K. Horio, Shibaura Institute of Technology, JP
Economy driven SiC Power Electronics Technology Development supported by the ECSEL Joint Undertaking framework program funds
T. Bieniek, G. Janczyk, A. Sitnik, A. Messina, Łukasiewicz Research Network – Institute of Electron Technology, PL
Smart Power and Power Discretes Hardware-software co-design for reliability improvement of BLDC power drivers for eMobility by key BCD Technologies running in Europe
G. Janczyk, T. Bieniek, Lukasiewicz Research Network - Institute of Electron Technology, PL

Topics & Application Areas

  • Novel Nanoelectonic Materials
  • High Performance Transistors
  • Memory Devices
  • Nanoelectronic Logic Materials
  • Carbon Based Electronics: Graphene, Carbon Nanotubes
  • Devices & Interconnects
  • Quantum Materials & Devices
  • Characterization
  • Other
2020 Sponsors & Partners

2019 SBIR/STTR Agency Partners:

SBIR/STTR Agency Partners