Smart Power and Power Discretes Hardware-software co-design for reliability improvement of BLDC power drivers for eMobility by key BCD Technologies running in Europe

G. Janczyk, T. Bieniek
Lukasiewicz Research Network - Institute of Electron Technology,
Poland

Keywords: R3PowerUp, ECSEL, power discretes, BCD, 90nm@300mm, CarrICool, power delivery, UAV, modelling, IC design, integration, BLDC, drive control

Summary:

Unprecedented diversity of microcontroller driven high-end electronic devices and applications stimulates the increase of customer expectations for product functionality flexibility and reliability. Advanced integration techniques and controlled product lifetime techniques applied by producers make products hard for service actions, whereas device disassembly before repair is very risky (if only available). Product replacement becomes the most common option instead of the repair for relatively cheap products or modules. Such a situation applies to small electric devices like vehicles (scooters, power boards… ), white goods (cookers, hovers, washing machines…) and many more tools and appliances/gadgets periodically appearing nowadays. All of them are exposed for exploitation overload and stress which should be kept under designers control in modules, devices and systems development stage. Following the fact that numerous above mentioned applications do not face voltages over 1kV, the set of Bipolar-CMOS-DMOS (abbr. BCD) technologies is a key branch of ICs development driven by the need to offer more and more complex integrate solutions incorporating diversified/mutual/redundant/complementary functions on the same chip and to guarantee high quality and reliability in all types of application environments. STMicroelectronics – which is the R3-PowerUP project coordinator and global leader in power technologies - develops the set of long-lasting BCD technologies combining strength of three different technologies available in a single chip instance: precise analog functions (Bipolar), digital design (CMOS - Complementary MOS) and high-voltage/power elements (DMOS - Double Diffused Metal Oxide Semiconductor). The R3-PowerUP project is focused on BCD 90nm (BCD9) and 110nm (BCD10) feature size processes. According increasing market demand for cheap electronics and components BCD9 and BCD10 have been selected for migration from 200mm Si substrates (the technology now available and running) to 300mm diameter substrates in order to reduce final price of the single chip and to have it fabricated in the Europe in European Pilot Line Facility for Smart Power technology in Agrate (Italy). The migration to 300mm wafer size involves both power discrete and advanced smart power/logic/PCM (non-volatile memories).