Random Telegraph Noise Induced by Single-Charge Trap of Negative Capacitance MOSFETs with MFMIS and MFIS Structures

S. Reddy Kola
National Chiao Tung University,
Taiwan

Keywords: MFMIS, MFIS, NCFET, Single charge trap, and Random telegraph noise

Summary:

This work for the first time explores electrical characteristics between negative capacitance field effect transistors (NCFETs) with metal ferroelectric metal insulator semiconductor (MFMIS) and metal ferroelectric insulator semiconductor (MFIS) structures. The investigatation reveals that the remnant polarization (Pr) and coercive field (EC) in MFMIS-type NCFET is superior than that of MFIS-type NCFET, in terms of the on-current and the subthreshold slope (SS). A low value of SS = 33 mV/dec is achieved for the MFMIS-type NCFET. This behavior is provoked through the enhancement of the longitudinal electric-field in the channel due to ferroelectric material. NCFETs with Pb(Zr0.2Ti0.8)O3 (PZT) as a thick FE layer provide high on-current and low SS as well. For We further explore the random telegraph noise (RTN) induced by SCT for the aforementioned NCFETs. The dependency of RTN magnitude varies the increase of the ferroelectric thickness (TFE).