Z. Zhaomin, H. Yanmei
Keywords: GaN, High electron mobility transistor (HEMT), High frequency, modeling
Summary:In this paper, a compact high frequency model for GaN HEMT device is presented. The model is developed based on the two-dimensional gas (2DEG) and drfit-diffusion (DD) fromalism, which makes it applicable for both quasi static and non-quasi static device operation. Effects of device temperature, channel length modulation and velocity saturation are discussed. Moreover, the effect of the gate leakage current on the high-frequency performance of the device is also investigated. It is compared with other commonly used analytical models and veriﬁed with numerical simulations.