Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices

H. Li
Atom Inc,
United States

Keywords: single chirality semiconducting single-walled carbon nanotube schottky contact nonlinear current−bias curves thin-film transistors large-scale electronic devices

Summary:

Single-walled carbon nanotube (SWCNT) networks deposited from a purple single chirality (6,5) SWCNT aqueous solution were electrically characterized as pure semiconductors based on metal/semiconductor/metal Schottky contacts using both complex instruments and a portable device. Both air-stable PMOS (p-type metal-oxide-semiconductor) and NMOS (n-type metal-oxide-semiconductor, resembling amorphous silicon) thin film transistors were fabricated on (6,5) SWCNT in large scale showing the characteristics of fA off current and ION/IOFF ratio of >1 Ă— 108. CMOS (complementary metal-oxide-semiconductor) SWCNT inverter was demonstrated by wire-bonding PMOS (6,5) SWCNT TFT and NMOS (6,5) SWCNT TFT together to achieve the voltage gain as large as 52.