Institute of Materials research and Engineering,
Summary:The two-dimensional transition metal dichalcogenides (TMD) layers have attracted tremendous interest due to their promising applications in optoelectronics and valleytronics. However, it is still challenging to realize large scale growth of the TMD layers with high quality and controllable thickness. In this study, we report the growth of 6-inch TMD layers on various commercial substrates using a rotational magneton sputtering deposition. Take the deposition of MoS2 films as example, we show that the sputtering process can realize large scale growth with good quality, wafe-scale uniformity and controllable thickness from monolayer to multi-layers. The deposited MoS2 layers based transistors exhibit p-type performance with an on/off current ratio of ~103 and hole mobility of 12.2 cm2 V-1 S-1. Our results demonstrate an effective method that is compatible to current Si techniques for wafer-scale growth of TMD layers.