Chemical Vapor Deposition Growth and Characterization of Iron-doped WS2 Monolayers

S. Fu, K. Kang, X. Wang, S. Chen, E-H Yang
Stevens Institute of Technology,
United States

Keywords: 2D Materials, Dilute magnetic semiconductors, Fe-doped WS2


Dilute magnetic semiconductors have drawn attention in scientific community over the last decade, driven by the advent of spintronics. Transition metal dichalcogenides (TMDs) have demonstrated great potential for new generation spintronics owing to their unique structural and electronic properties. Experimental and theoretical efforts have been made to understand the role of magnetic impurities in TMDs, such as Mn, Fe, Co, and Ni [1]. Theoretical studies show that Fe-substitution in W site leads to spin-polarized states and can achieve room temperature ferromagnetic ordering and clustering [2]. Here, we demonstrate direct growth of Fe-doped WS2 monolayers via chemical vapor deposition. We obtained Fe-doped WS2 monolayers with an average crystal size of 40 μm. We observed a PL peak at 1.92 eV at room temperature, a 50 meV redshift from 1.97 eV obtained from undoped WS2 monolayers synthesized in our lab. Scanning transmission electron microscopy images showed that Fe atoms substituted W atoms. X-ray photoelectron spectroscopy confirmed that the Fe doping concentration of 0.5% to 0.9% was achieved. We will correlate the growth recipe with its doping concentration for the optimized growth of Fe-doped WS2 monolayers. 1. C. Jia et al., RSC Adv., 2018, 8, 18837 2. Y. Wang et al., Mat. & Des., 2017, 121, 77