An Effective Mobility Model for Tunneling Double-Gate MOSFET ( T-FinFET)

X. He, J. Pan, J. Liu, C. Li, G. Hu, G. Ma, J. He, M. Chan
SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution,
China

Keywords: tunneling double-gate MOSFET, effective mobility, modeling and simulation

Summary:

We have derived an analytical model for the effective field (Eeff) model of undoped Ultra-Thin Body (UTB) Double Gate (DG) SOI Tunneling MOSFETs ( T-FinFET) from the solution of the Poisson’s equation in this paper . The Eeff is directly linked to the carrier mobility in the strong inversion and can be used to predict the bias dependence of the effective mobility (eff). Extensive simulations show that the Eeff model is not influenced by the quantum effect besides which indicates that its influence is limited to the constant zero-field mobility (o) and independent of bias. The model predicts that for the same amount of inversion charge, a symmetric DG (SDG) MOSFET has higher eff than UTB or asymmetric DG (ADG) MOSFET especially at high gate bias or strong turn-on.