A Compact Model for SiC Junction Barrier Schottky Diode for High-Voltage and High-Temperature Applications

D. Navarro, F. Herrera, M. Miura-Mattausch, H.J. Mattausch, M. Takusagawa, J. Kobayashi, M. Hara
Hiroshima University,

Keywords: junction barrier Schottky diode, Schottky barrier diode, compact model, SiC


SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, with an addition of p+ implant to reduce the reverse current in SBD. In this work, we report a compact model developed for JBS. The model consists of the thermionic emission current occurring at the metal/SiC junction together and the resistive effects of the p+ implant in the lightly doped drift region of the diode. The developed model can calculate the voltage-current characteristics of JBS for varying geometries of the p+ implant by without introducing model parameters. Measured current characteristics is well- reproduced for varying temperatures. The model is also applicable for the SBD structure.