T.C. Diaz, C.E. Cornejo, M.E. Bertram, N. Herbots, A. Dhamdhere, W.L. Lee, B. Baker, R. Islam
Cactus Materials, Inc.,
Keywords: GaAs, Si heterogenous wafer nano-bonding
Summary:Nano-BondingTM of heterogeneous semiconductors has the potential to increase the performance and efficiency of silicon photonics, energy, optics, and high-end technology through band gap engineering. Nano-Bonding TM can directly cross-bond at the molecular level full-size wafers without using Ultra High Vacuum (UHV) at relatively low temperatures. Nano-Bonding TM uses engineering of surface energy, chemistry, and composition as well as mechanical compression. The results of this surface engineering prior to bonding are characterized by Three Liquid Contact Angle Analysis (3LCAA) for surface energy composition and Ion Beam Analysis (IBA) for chemical composition and crystallinity. The resulting bonded interfaces are characterized using Confocal Scanning Acoustic Microscopy (CSAM) and cross-section Transmission Electron Microscopy (TEM).