A New Method to Fin-width Line Edge Roughness Effect Simulation of FinFET Performance

Y. Zhu, W. Zhao, W. Wang, W. Wu, Z. Feng, J. He, P. He, L. Song
Peking University Shenzhen SOC Key Laboratory,

Keywords: fin-width, LER, intrinsic parameter fluctuation, FinFET, 3-D numerical simulation


This paper developed a full three-dimensional (3-D) statistical simulation method to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic parameter fluctuations at fixed LER parameters are studied in carefully designed simulation experiments. The result shows that Fin-width LER causes a dramatic shift and fluctuations in threshold voltage. The simulation results also imply that the velocity saturation effect may come into effect even under low drain voltage due to LER effect.