Comparitive study of charge transport in quantum confined dielectric nanolayer field effect transistor

C.R.A John Chelliah, R. Swaminathan
Karunya University,

Keywords: charge transport, quantum confined layer, field effect transistor


In this work, we designed an n-channel field effect transistor, with p-type Si as a substrate, in which we used lead chalcogenides such as PbSe, PbS, and PbTe quantum dots as semiconductor, III-N materials such as BN, AlN, and GaN quantum confined nanolayers as the dielectric layer. All the configurations are designed, characterized and studied.