Penn State Materials Research Institute

University Park
United States

BZN Pyrochlore Thin Films

Electronics, Sensors & Communications


The disclosed relates to bismuth-zirc-niobnate pyrochlore thin film, abbreviated as “BZN.” The present invention relates to a process of preparation of such thin films and coated articles suitable for use in dielectric applications. The technology includes an article comprising a substrate and a thin film of pyrochlore coated on substrate.