Inherently Radiation Hardened Electronics: An Examination of III-V Nanowire Transistors and Spin-Based Logic Devices

D. Telesca
Air Force Research Lab (AFRL), US

Keywords: nanowire, spin-based logic, III-V materials, graphene


This work will present two avenues currently being pursued for inherently radiation hardened electronics. It will examine the current development of III-V all-around gate oxide nano-wire transistors. The carriers in these nanowires have dramatically increased mobility which can be used to increase processing speed, while the transistor geometry provides an avenue for inherent radiation hardness. In addition, this work will also examine the development of a spin-based magneto-logic search engine. The manner in which the logic is written has the potential to be radiation hardened in addition to being nonvolatile. Realization of this type of logic will have an impact on both space electronics, as well as current terrestrial electronics.