Model the AlGaN/GaN High Electron Mobility Transistors

Y. Wang
Tsnghua University, CN

Keywords: GaN HEMT, compact model


We developed a set of physics-based compact model of GaN HEMT for RF and high power applications. The model includes close-formed I-V, the C-V characteristics, high frequency noise characteristics, self heating effect, small signal and large signal model. This model shows good agreement with the experimental data and has two-order continuity. The models can be implemented in commercial circuit simulator and is easy to be utilized for correlative circuits design.