Polymer:Nanoparticle Memristors with Electrode-Sensitive Resistive Switches

J. Ouyang
National University of Singapore, SG

Keywords: memory, resistive switch, nanoparticle


Novel memory devices are in urgent need for the rapidly developing information technology. Among the emerging memory devices, the two-terminal polymer:metal nanoparticle memory devices, which have a polymer layer blended with metal nanoparticles, are quite promising to be the next-generation memory devices, since they can be fabricated through low cost solution processing and have high density and high flexibility. They are called memristors because they exhibit resistive switches under electric field. The resistive switches are related to the charging or discharging of the metal nanoparticles. This suggests that the resistive switches should be sensitive to the metal nanoparticle and the electrode. However, the devices using metal nanoparticles coated with metal oxide or saturated alkanethiol exhibited electrical behavior insensitive to the core of the metal nanoparticle and the electrodes. In this paper, I will report polymer:nanoparticle memristors with electrode-sensitive resistive switches and discuss the mechanism for the resistive switches.