TechConnect World 2017
National SBIR/STTR Conference National Innovation Summit & Showcase Nanotech 2017

2017 Workshop on

Compact Modeling

WCM 2017

WCM - Compact Modeling

Symposium Chair

Xing ZhouXing Zhou
Professor
Nanyang Technological University


Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for circuit design over the past decades, and are playing an ever increasingly important role in the nanometer system-on-chip (SOC) era. As the mainstream MOS technology is scaled into the nanometer regime, development of a truly physical and predictive compact model for circuit simulation that covers geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major challenge.

Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together. The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors. The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation, which are largely categorized into the following groups:

  • Intrinsic Models
    • Bulk MOSFET
    • SOI MOSFET (partial-/full-depletion)
    • Multiple-Gate FET (DG/TG/GAA)
    • High-Voltage/LDMOS
    • Thin-Film Transistor (TFT)
    • Schottky-Barrier/Tunneling/Junctionless FET (SB-FET/JLFET/TFET)
    • Bipolar/Junction (BJT/HBT/SiGe/JFET)
    • HEMT (GaN/InGaP/InGaAs)
    • Non-quasi-static
    • RF
  • Extrinsic/Interconnect Models
    • Parasitic elements
    • Passive device
    • Diode
    • Resistor
    • ESD
    • Interconnect
  • Atomic/Quantum Models
    • Ballistic device
    • Carbon-Nanotube/Graphene FET (CNFET/GFET)
    • Organic FET
  • Statistical Variability/Reliability/Noise Models
    • Statistical variability
    • Reliability/hot carrier
    • Mismatch
    • Noise
  • Multi-Level Models
    • Subcircuit model
    • Gate/block model
    • Behavioral model
    • Numerical/TCAD/table-based
  • Model Extraction and Interface
    • Parameter extraction and optimization
    • Model-simulator interface
    • Model standardization
    • Model development platform
    • Verilog-A

The confirmed invited speakers are listed below:

  • Dimitri Antoniadis and Ujwal Radhakrishna, Massachusetts Institute of Technology, USA
  • Mansun Chan and Lining Zhang, Hong Kong University of Science and Technology, Hong Kong
  • Siau Ben Chiah, Nanyang Technological University, Singapore
  • Robert Dutton and Yang Liu, Stanford University, USA
  • Chenming Hu and Juan Pablo Duarte, University of California at Berkeley, USA
  • Binbin Jie and Chihtang Sah, Xiamen University, China
  • Ning Lu, IBM, USA
  • Mark Lundstrom and Xufeng Wang, Purdue University, USA
  • Patrick Martin, LETI, France
  • Mitiko Miura-Mattausch, Hiroshima University, Japan
  • Guofu Niu, Auburn University, USA
  • Thierry Poiroux, CEA, France
  • Michael Shur, Rensselaer Polytechnic Institute, USA
  • Yan Wang, Tsinghua University, China

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