TechConnect World 2017
National SBIR/STTR Conference National Innovation Summit & Showcase Nanotech 2017

Nanoelectronics

Nanoelectronics

Abstracts due: February 28, 2017

Technical Abstract Submission

Please first review the information for authors — abstract submission guidelines.

Key Speakers

Baratunde A. ColaThermal Dissipation Problems and Opportunities for Innovation in Electronics
Baratunde A. Cola
CEO, Carbice Nanotechnologies, Inc

Jonathan SpanierJonathan Spanier
Professor, Materials Science & Engineering
Drexel University

Alex AdronovAlex Adronov
Professor, Department of Chemistry and Chemical Biology
McMaster University, Canada

Qing CaoCarbon Nanotube Transistor Technology for the 5 nm Technology Node and Beyond
Qing Cao
Research Scientist: Materials Science/Nanotechnology, IBM Thomas J. Watson Research Center


Symposium Sessions

Monday May 15

1:00Electronics Innovation Spotlights: Xerox, Energizer
3:00Energy Innovation Spotlights: Shell, Ingersoll Rand

Tuesday May 16

10:30Electronics Innovation Spotlights: Panasonic, LG
10:30Aerospace/Defense Innovation Spotlights: Aerojet, Sikorsky/Lockheed Martin

Wednesday May 17

8:30CNT-Based Devices I
10:30CNT-Based Devices II
1:30Nanoelectronic Devices
Nanoelectronics

Symposium Program

Monday May 15

1:00Electronics Innovation Spotlights: Xerox, Energizer
3:00Energy Innovation Spotlights: Shell, Ingersoll Rand

Tuesday May 16

10:30Electronics Innovation Spotlights: Panasonic, LG
10:30Aerospace/Defense Innovation Spotlights: Aerojet, Sikorsky/Lockheed Martin

Wednesday May 17

8:30CNT-Based Devices I
8:30Carbon Nanotube Transistor Technology for the 5 nm Technology Node and Beyond (invited presentation)
Q. Cao, IBM T.J. Watson Research Center, US
8:55Thermal Dissipation Problems and Opportunities for Innovation in Electronics (invited presentation)
B. Cola, Carbice Nanotechnologies, US
9:20Next Generation Nanomaterials: Hierarchical Hybrid Architectures for Robust & Reusable Devices
S.M. Mukhopadhyay, Wright State University, US
9:40Progress towards total structure control in SWCNT populations
J. Fagan, National Institute of Standards and Technology, US
10:00Fast Electrochromic Device Based on Single-Walled Carbon Nanotube Thin Films (invited presentation)
M. Itkis, University of California, Riverside, US
10:30CNT-Based Devices II
10:30Nanomaterials for Printed Electronics (invited presentation)
P. Malenfant, National Research Council of Canada, CA
10:55TBA (invited presentation)
A. Adronov, McMaster University, CA
11:20Facile and High-Throughput Fabrication of Carbon Nanotube Carpet-PDMS Structures toward Flexible Supercapacitors
R. Zhang, J. Ding, E.H. Yang, Stevens Institute of Technology, US
11:40Carbon nanotubes functionalized neural probe platform for characterization of cell attachment and motility
J. Tyson, M. Tran, T. Patrick, G. Slaughter, University of Maryland Baltimore County, US
12:00Tunable and label-free virus enrichment for ultrasensitive virus detection using carbon nanotube arrays
Y-T Yeh, Y. Tang, A. Sebastian, A. Dasgupta, N. Perea-Lopez, I. Albert, H. Lu, M. Terrones, S-Y Zheng, Pennsylvania State university, US
12:20Dual Glucose and Lactate Self-powered biosensor
A. Baingane, N. Mburu, C. Animanshaun, G. Slaughter, University of Maryland Baltimore County, US
1:30Nanoelectronic Devices
1:30TBA (invited presentation)
O. Brand, Georgia Institute of Technology, US
1:55TBA (invited presentation)
J. Spanier, Drexel University, US
2:20Feedback Process Control for Nano-manufacturing of Semi-conductor Circuits
W. Kohn, Z.B. Zabinsky, Atigeo, LLC and CUNY Graduate Center, Computer Science Department, US
2:40Aberration-corrected Electron Beam Lithography at the One Nanometer Length Scale
A. Stein, V.R. Manfrinato, L. Zhang, C.-Y. Nam, E.A. Stach, C.T. Black, Brookhaven National Laboratory, US
3:00Controlling the Interface-Size of Inorganic/Organic Semiconductors Heterojunction Nanowires for Perfect Performance Diodes
H. Liu, Y. Li, Y. Li, Chinese Academy of Sciences, CN
3:20Spintronics: Recent developments on ultra-low-energy, area-efficient, and fast spin-devices and spin-circuits
K. Roy, Purdue University, US
3:40High density multifunctional neural probes for parallel read-out and control
V. Lanzio, M. West, S. Sassolini, S. Dhuey, A. Koshelev, H. Adesnik, G. Telian, R. Witharm, P. Denes, F. Martinez Mc-kinney, S. Ito, S. Cabrini, Lawrence Berkeley National Laboratory, US
NanoelectronicsExpo Hall D & E
Simulation and Analytical Model to study the impact of Gate Misalignment in p-n-i-n Tunnel FET
U. Upasana, S. Gupta, R. Narang, M. Saxena, M. Gupta, University of Delhi, IN
Excellent bipolar resistive switching behavior in WN thin film for non-volatile ReRAM device
R. Prakash, D. Kaur, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India, IN
The second and third harmonic generation coefficients in InGaN/GaN single quantum wells
R.L. Restrepo, A.L. Morales, C.A. Duque, Universidad EIA, CO
CarrICool – the Innovative 3D Interposer Platform for HPC Systems: Analysis, Simulations, Optimization, Practice for Reliability Improvement and Performance Increase
G. Janczyk, T. Bieniek, Instytut Technologii Elektronowej, PL
Temperature Dependent Analytical Model for Cylindrical Surrounding Gate Ferroelectric Junctionless Transistor (CSGFJL)
H. Mehta, H. Kaur, University of Delhi, IN
Emergent ferroelectricity in disordered tri-color multilayer structure comprised of ferromagnetic manganites
L. Niu, C. Chen, X. Dong, H. Xing, B. Luo, K. Jin, Shaanxi Key Laboratory of Condensed Matter Structures and Properties,Northwestern Polytechnical University,, CN
Hydrogen Sensors Based on Noble Metal catalytic dots on RF Sputtered Nanocrystalline ZnO Thin film
L. Rajan, C. Periasamy, V. Sahula, Malaviya National Institute of Technology, IN
Enhancement of Field-Effect Mobility by controlling the surface potential of PVP Insulator in Pentacene-based Thin Film Transistors
Y. Jang, K-Y Kim, J. Jo, KIMM, KR
Phosphor-in-Glass Color Converter Based On A Low-Melting Precursor Glass For Long-Lifetime Warm W-LEDs Application
X. Xiang, B. Wang, H. Lin, Y. Wang, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, CN

Approaches based on nanoscale materials, engineering, and technology are changing the very nature of electronics and the essence of how electronic devices are manufactured.

The 10th annual Nanoelectronics Symposium will highlight novel materials, fabrication processes, devices, designs, and architectures: revealing and inspiring the future of electronics. Please join innovators from industry, academia, and government laboratories from around the world at this keynote event.

Topics & Application Areas

  • High Performance Transistors
  • Memory Devices
  • Quantum Materials & Devices
  • Nanoelectronic Logic Materials
  • Carbon Based Electronics: Graphene, Carbon Nanotubes
  • Devices and Interconnects
  • Nanotechnology-Inspired Grand Challenge for Future Computing
  • Novel Nanoelectonic Materials
  • Other

Sponsor & Exhibitor Opportunities

To receive announcements and news, please join our mailing list.

Click here to add this event to your calendar.

Platinum Sponsors
Korusip
NSTXL
nst

Silver Sponsors
Fujifilm
TechOpp

Corporate Acceleration Partners
Aerojet
Arkema
Church & Dwight
Corning
Cummins
Eastman Chemical
Evonik
Henkel
Huntsman
Ingersoll_Rand
Lockheed Martin
LOreal
Magna
Michelman
Owens Corning
Panasonic
Praxair
Sabic
SAINT-GOBAIN
Shell
UTC

Technology Development Partners
 
Argonne
ceatech
Clemson University
Innovate Hawaii
Iowa State University
korusip
KYUNGPOOK National University
NASA
National University of Singapore
New Jersey Innovation Institute
PolyU
SungKyunKwan University
UCI
University Of Minnesota
UCSB

Supporting Partners
ACCT
American Elements
Angel Capital Associates
AOCS
Arrowhead Center
Asia Nano Forum
AURP
AUTM
Bilat USA
Coatings
Diplomacy Matters
Explore Nano
FCHEA
FLC
Graphene Council
InterNano
Journal of Nanobiotechnology
LES
NVCA
NCURA
NECEC
SBIR
SBDC
Taylor Francis CRC
Texas Nanotech Initiative
Texas Tech University ORC.gif
UIDP

TechConnect World 2017

Jointly produced by