Modeling of Minibands for Si/SiC Quantum Dot Superlattice Solar Cells

Y-C. Tsai, M-Y. Lee, Y. Li, S. Samukawa
National Chiao Tung University,
Taiwan

Keywords: minibands, Si/SC, quantum dot, superlattice, solar cells, modeling and simulation

Summary:

Silicon/silicon carbide quantum dot superlattice (Si / SiC QDSL) solar cells with aluminum oxide (Al2O3) passivation experimentally show high short-circuit current (Jsc) of 4.75 mA/cm2. Corresponding numerical result reveals that both the quantum enhancement on effective bandgap and the minimum transition energy play a critical role and get a close Jsc of 4.77 mA/cm2 under AM1.5 and one sun illumination. Conversion effi-ciency of 17.4% is then estimated by considering experimental QD geometries and a hexagonal QDSL with an inter-dot spacing of 0.3 nm.