Design and Simulation on Nanoelectromechanical bi-layer Graphene Nanoribbon Device with Graphene Nanoflake Shuttle

O.K. Kwon, J.W. Kang, J.H. Lee
Semyung University,

Keywords: graphene nanoribbon, graphene nanoflake, shuttle memory, molecular dynamics


Nanoelectromechanical (NEM) switches are similar to conventional semiconductor switches in that they can be used as relays, transistors, logic devices and sensors, and they are promising devices for use in mechanical computing, data storage, and RF communications due to their desirable properties, including microwave operating frequencies, low power consumption, high on/off ratio, radiation hardness, and device density that is comparable to that of semiconductor integrated circuits. However, the operating principles of NEM switches and semiconductor switches are fundamentally different. The basic idea underlying the Nanoelectromechanical systems (NEMSs) is that there is a strong electromechanical coupling of the devices on the nanometer scale at which the Coulomb forces associated with device operation are comparable to the chemical binding forces. These differences imbue the NEM switches with advantage over semiconductor switches when operating in extreme environments. Here, we will present the dynamic properties of graphene-nanoribbon (GNR) memory encapsulating graphene-nanoflake (GNF) shuttle in the potential to be applicable as a non-volatile random access memory via molecular dynamics simulations. This work explicitly demonstrates that the GNR encapsulating the GNF shuttle can be applied to nonvolatile memory. The potential well was originated by the increase of the attractive vdW energy between the GNRs when the GNF approached the edges of the GNRs. So the bistable positions were located near the edges of the GNRs. Such a nanoelectromechanical non-volatile memory based on graphene is also applicable to the development of switches, sensors, and quantum computing.