Non-destructive method for durable post-growth doping of graphene
Univalor, QC, Canada
We are proposing a method for doping graphene after it has been grown, by real substitution of atoms and not simply dopant adsorption. This is done using a low-pressure plasma such that no defects are created in the graphene layer. The method is described in a US provisional patent application.
Primary Application Area: Materials & Chemical
Technology Development Status: Prototype
Technology Readiness Level: TRL 3
FIGURES OF MERIT
Value Proposition: We are proposing the first method making it possible to dope graphene without creating defects while fulfilling the two requirements for envisaging large scale applications, that is 1) post-growth doping which is required for convenient manufacturing, and 2) substitutional doping for ensuring a durable effect.
Organization Type: Academic/Gov Lab
Showcase Booth #: 26T
GOVT/EXTERNAL FUNDING SOURCES
Government Funding/Support to Date: Grants from Natural Sciences and Engineering Research Council of Canada (NSERC), Canada Fundation for Innovation (CFI) and Fonds de Recherche du Québec Nature et Technologies (FRQNT).
Primary Sources of Funding: Federal Grant
Looking for: Both Funding and Development Partners