TechConnect Innovation Program

Ultralow Spin-on Dielectrics (k < 2.0) with Superb Mechanical properties as Interlayer Dielectrics for the Next Generation System LSI

Sogang University Research Foundation, Seoul, Korea

TECHNOLOGY SUMMARY

Our ultralow spin-on dielectrics (k=1.94) show excellent mechanical properties (E=7.2GPa) which are closely relative to sizes (r<2nm) and uniform distribution of pores. These remarkable results are obtained by the specially designated reactive porogens. The reactive porogens can prevent pore aggregation due to their reactivity with organosilicates during sol-gel reaction.

Primary Application Area: Electronics, Sensors & Communications

Technology Development Status: Prototype

Technology Readiness Level: TRL 5

FIGURES OF MERIT

Value Proposition: We used chemically reactive porogens and controlled the size and distribution of nanopores. Therefore, we succeed to control the mechanical properties even at high porosities, which can withstand CMP processing. ITRS 2013 indicates this ULK material will be expected to be applicable to 8 nm node in 2027.

SHOWCASE SUMMARY

Organization Type: Academic/Gov Lab

Showcase Booth #: 525

Website: http://www.sogang.ac.kr/english/

GOVT/EXTERNAL FUNDING SOURCES

Government Funding/Support to Date: Global Frontier R&D program on Center for Multiscale Energy System funded by the National Research Foundation under the Ministry of Education, Science and Technology, Korea

The Korea Center for Artificial Photosynthesis (KCAP) located in Sogang University funded by the Minister of Science, ICT and Future Planning (MSIP) through the National Reaserch Foundation of Korea

Primary Sources of Funding: Federal Grant

Looking for: Both Funding and Development Partners