Sequential Infiltration Synthesis (SIS
Argonne National Laboratory, Illinois, United States
Sequential infiltration synthesis is a newly developed process by which polymeric films are infiltrated with inorganic materials creating durable films with the properties of a ceramic coating. These polymers are considerably more robust, offering a simple, plug-in solution, enabling the lithography industry to maintain the current pace of microelectronics development.
Primary Application Area: Instrumentation & Manufacturing
Technology Development Status: Prototype
Technology Readiness Level: TRL 7
FIGURES OF MERIT
Value Proposition: This SIS lithography process offers simplicity, and higher pattern transfer quality over existing processes, and introduces functionality (magnetic, optoelectronic, catalytic, etc.) directly into a resist pattern. The resist/mask is easy to remove, allows deep features to be patterned into the substrate and concerns over wetting and pattern collapse are eliminated.
Organization Type: Academic/Gov Lab
Showcase Booth #: 707
GOVT/EXTERNAL FUNDING SOURCES
Government Funding/Support to Date:
Primary Sources of Funding: Federal Grant
Looking for: Development / License Partners