TechConnect Innovation Program

Sequential Infiltration Synthesis (SIS

Argonne National Laboratory, Illinois, United States

TECHNOLOGY SUMMARY

Sequential infiltration synthesis is a newly developed process by which polymeric films are infiltrated with inorganic materials creating durable films with the properties of a ceramic coating. These polymers are considerably more robust, offering a simple, plug-in solution, enabling the lithography industry to maintain the current pace of microelectronics development.

Primary Application Area: Instrumentation & Manufacturing

Technology Development Status: Prototype

Technology Readiness Level: TRL 7

FIGURES OF MERIT

Value Proposition: This SIS lithography process offers simplicity, and higher pattern transfer quality over existing processes, and introduces functionality (magnetic, optoelectronic, catalytic, etc.) directly into a resist pattern. The resist/mask is easy to remove, allows deep features to be patterned into the substrate and concerns over wetting and pattern collapse are eliminated.

SHOWCASE SUMMARY

Organization Type: Academic/Gov Lab

Showcase Booth #: 707

Website: www.anl.gov

GOVT/EXTERNAL FUNDING SOURCES

Government Funding/Support to Date:

Primary Sources of Funding: Federal Grant

Looking for: Development / License Partners