Modeling of Short-Channel Effect for Ultra-Thin SOI MOSFET on Ultra-Thin BOX

H. Miyamoto, Y. Fukunaga, H. Zenitani, K. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch
Hiroshima University, JP

Keywords: modeling, investigation, simulation


The SOTB-MOSFET (ultra-thin film SOI layer on ultra-thin BOX) is a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect. Besides, the thin box layer can well control its threshold voltage by varying back-gate voltage from negative to positive. Charges induced within the device are not only located at the front gate but also at the back gate, depending on the bias conditions. With the complete surface-potential-based compact model HiSIM-SOTB separation of the front-gate current and the back-gate current becomes possible, and is used to analyze the short-channel effect independently. We propose an analytical Vth model describing the short-channel effect considering both charges induced at the front gate as well as the back gate accurately. It is also demonstrated that the influence of the technological variations on Vth is enhanced for the SOTB generation.