Spatially Controlled Fabrication of Brightly Fluorescent Nanodiamond-Array with Enhanced Far-Red Si-V Luminescence

S. Singh, V. Thomas, D. Martyshkin, V. Kozlovskaya, E. Kharlampieva, S.A. Catledge
University of Alabama at Birmingham, US

Keywords: fluorescent nanodiamond (FND), scanning probe ‘dip-pen’ nanolithography, Raman mapping, atomic force microscopy, room temperature photoluminescence


A new approach for pre-CVD-growth precision-patterned seeding of nanodiamonds in the form of a dot-array onto SiO2 was demonstrated using a scanning probe ‘dip-pen’ nanolithography (DPN) technique. The incorporation of photostable Si-V luminescent centers with enhanced far-red fluorescence (ca.738 nm) into individual dots in the ND-array was performed by subsequent CVD treatment of the as-printed ND-array.Fluorescence from Si-V defects in ND may be particularly useful for fluorescence-based biomedical applications due to its extreme photostability and narrow band emission that is well separated from endogenous autofluorescence. Precision patterning of nanodiamonds may lead to the next generation of easily standardized devices with high-fidelity enhanced sensing, imaging, and drug-delivery capability.