Drain Current Model for Thin Body Undoped and Lightly Doped Double-Gate MOSFETs

H. Abd Elhamid, B. Ineguez, Y. Ismail, MJ. Deen
Zewail City of Science and Technology, EG

Keywords: DG MOSFET, quantum mechanics, drain current, SPICE


We developed new compact models that include the QM effects on electrical properties such as the surface potential, and drain current. The models were used to study the impact of subband engineering and holes/electrons IMREF on the device electrical parameters such as drain current, surface potential and effective mobility for DG FETs with Si film thickness below 20nm. These models have been verified with published self-consistent results form numerical calculations of the coupled Poission-Schrodinger equations.