Converting Dimensions: A Facile and High-Yield Route for Getting Sub-100 nm Silicon Nanowires

S.H. Lee
Yonsei University, KR

Keywords: silicon nanowire, metal-assisted chemical etching, sputtering, rapid thermal annealing


For synthesizing uniform sub-100-nm Si nanowires (NWs), we introduce a metal-assisted chemical etching (MCE)-based facile and high-yield route, employing simple thermal annealing and vacuum deposition processes. Under rapid thermal annealing, an ultrathin Ag film on a Si substrate is self-organized into Ag nanoparticles, which are used for making Si nanoholes through a short MCE process. After the sputter deposition of Ag on the caved Si substrate with nanoholes, a Ag nanomesh is obtained. Finally, with the nanomesh as an etching mask, Si NWs are successfully produced through a second MCE process.