Controlled Growth of Single Walled Carbon Nanotubes for Electronic Devices

F.Z. Bouanis, E. Norman, V. Huc, M. Chaigneau, J.L. Maurice, C.S. Cojocaru
Ecole polytechnique (LPICM )/IFSTTAR/ICMMO-PARIS-SUD, FR

Keywords: single walled carbon nanotubes, transistors, memristors, sinsors


Here we report, a robust and versatile approach for reproducible and controllable growth of single walled carbon nanotubes (SWNTs) using self-assembled monolayer (SAM) technique coupled with atomic hydrogen (Hat) pretreatment to control the catalytic metallic nanoparticles morphology and density. This new approach represents a first step towards a general route to control the yield, the diameter distribution and possibly the chirality of nanotubes. using this approach, single walled carbon nanotubes exhibit remarkably high crystalline quality, with well controlled yield and diameter strongly dependent on the initial catalyst species. Field effect transistors (FETs) with excellent performance characteristics were obtained using such in-place grown SWNTs as channel. The electronic properties of SWNTs can also be tuned using this approach. Indeed, the transistors obtained from RuTTP and FeCl3 as catalysts precursors exhibit ON/OFF current ratio up to ~ 108, indicative of the direct growth of mostly semi-conducting SWNTs. By contrast, devices obtained from RuCl3 salts display ON/OFF current ratio well bellow 102, indicating the direct growth of highly metallic specimens enriched SWNTs. Other devices (memristors, sensors, Inverters…) have been achieved by this approach.