TCAD Thermal Analysis of Gate Workfunction Engineered Recessed Channel MOSFET

G. Arora, M. Monika, R. Chaujar
Delhi Technological University, IN

Keywords: thermal analysis, recessed channel, dual metal gate, gate work function engineering, atlas, modelling, simulation, lattice temperature, heat capacity, heat conductivity

Summary:

This paper discusses the thermal analysis of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET involving an RC and GEWE design integrated onto a conventional MOSFET. Furthermore, it focuses on the comparative study of conventional MOSFET with GEWE-RC MOSFET in terms of various thermal parameters such as lattice temperature, heat conductivity, heat capacity and impact generation rate. This paper thus optimizes and predicts the feasibility of a novel design, i.e., GEWE-RC MOSFET for high-performance applications where self-heating effects and thermal behavior is a major concern. TCAD simulations using ATLAS demonstrate that the GEWE-RC MOSFET structure exhibits significantly improved thermal performance, where low power consumption is required and in digital logic and memory applications where fast switching action of MOS is needed.