TCAD Thermal Analysis of Gate Workfunction Engineered Recessed Channel MOSFET

G. Arora, M. Monika, R. Chaujar
Delhi Technological University, IN

Keywords: thermal analysis, recessed channel, dual metal gate, gate work function engineering, atlas, modelling, simulation, lattice temperature, heat capacity, heat conductivity


This paper discusses the thermal analysis of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET involving an RC and GEWE design integrated onto a conventional MOSFET. Furthermore, it focuses on the comparative study of conventional MOSFET with GEWE-RC MOSFET in terms of various thermal parameters such as lattice temperature, heat conductivity, heat capacity and impact generation rate. This paper thus optimizes and predicts the feasibility of a novel design, i.e., GEWE-RC MOSFET for high-performance applications where self-heating effects and thermal behavior is a major concern. TCAD simulations using ATLAS demonstrate that the GEWE-RC MOSFET structure exhibits significantly improved thermal performance, where low power consumption is required and in digital logic and memory applications where fast switching action of MOS is needed.