Prospect and challenges for carbon nanotube transistors in high performance nanoelectronics beyond 2020

A. Franklin
IBM T. J. Watson Research Center, US

Keywords: CNT, transistors, nanoelectronics


As the electronics community becomes increasingly aware of the impending end of scaling for silicon-based transistors, interest is growing in the search for a supplemental or replacement material that can continue the scaling trend. Carbon nanotubes (CNTs) have been heralded as an ideal 1D channel material for the post-Si transistor era, receiving increasing attention since the early 2000s. Tremendous progress has been made in the last few years toward a CNT-driven transistor technology, including advances in device scaling, circuit demonstration, CNT purification, and CNT placement. In this talk, the motivations for pursuing a CNT transistor technology for high-performance digital computing beyond the 7 nm technology node will be reviewed. These include the demonstrated scalability of the channel length to sub-10 nm and operation at low supply voltage. The remaining obstacles to realizing a CNT transistor technology will then be considered along with the latest developments toward overcoming each obstacle. Overall, the prospects for CNT transistors beyond 2020 will be considered in light of their remaining challenges to show what must—and should—be done to realize this promising technology.