Impact of Parametric Variations on Heat Conductivity of Gate Electrode Work Function Engineered Recessed Channel MOSFET

M. Monika, G. Arora, R. Chaujar
Delhi Technological University, IN

Keywords: gate electrode workfunction engineered recessed channel (GEWERC), heat conductivity, negative junction depth, gate oxide thickness, gate length, substrate doping


In this paper, thermal analysis behavior of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET involving an RC and GEWE design integrated onto a conventional MOSFET has been investigated by studying the impact of various technological parameter variations, such as negative junction depth (NJD), gate oxide thickness (tox), gate length (LG), and substrate doping (NA) on the thermal conductivity of GEWE-RC MOSFET. This paper demonstrates the importance of nanoscale considerations for the thermal design of low-temperature semiconducting electronics. Thus, it optimizes the design of a novel design, i.e., GEWE-RC MOSFET for high-performance thermal applications where self-heating effects and thermal behavior is a major concern. TCAD simulations using ATLAS demonstrate that reduction in parameters like gate length, oxide thickness, negative junction depth and substrate doping results in poor thermal conduction. This assessment is required where low power consumption is required and in digital logic and memory applications where fast switching action of MOS is needed.