Modeling of AlGaN/GaN FinFET

C. Yadav, S Khandelwal, Y.S. Chauhan
Indian Institute of Technology Kanpur, India, IN

Keywords: III-Nitride, FinFET, tri-gate


In this work, a behavioral model of drain current and threshold voltage for normally‐off (enhancement mode) AlGaN/GaN based FinFET/trigate is presented. AlGaN/GaN based FinFET/trigate devices have additional sidewall gates as compared to top gate of the conventional planer HEMT and show positive threshold voltage[1]‐[5]. The increase in threshold voltage with reduction in channel width is observed due to the increased field induced gate control from sidewall on the channel and reduction in piezoelectric polarization [1]‐[5]. The proposed model shows excellent agreement with state‐of‐the‐art experimental and simulation data.