Expanding Device Functionalities via Magnetoelectric and Ferroelectric Components

E.Y. Tsymbal
University of Nebraska-Lincoln, US

Keywords: electronic device, magnetoelectric, ferroelectric

Summary:

Developing new device capabilities and expanding their functionalities is critical for propelling information technology beyond its current limits. This involves novel physical principles of device operation providing, in particular, non-volatility and low-power consumption. One of the emerging concepts is a voltage control of magnetization, which can be realized via electrically controlled magnetic anisotropy and exchange bias. Another is a tunneling electroresistance effect in ferroelectric tunnel junctions, where switching of ferroelectric polarization of the tunneling barrier leads to off/on resistance ratios exceeding 104 at room temperature. This talk will discuss physical principles of these phenomena that are promising for nonvolatile and low-power device operation.