Expanding Device Functionalities via Magnetoelectric and Ferroelectric Components

E.Y. Tsymbal
University of Nebraska-Lincoln, US

Keywords: electronic device, magnetoelectric, ferroelectric


Developing new device capabilities and expanding their functionalities is critical for propelling information technology beyond its current limits. This involves novel physical principles of device operation providing, in particular, non-volatility and low-power consumption. One of the emerging concepts is a voltage control of magnetization, which can be realized via electrically controlled magnetic anisotropy and exchange bias. Another is a tunneling electroresistance effect in ferroelectric tunnel junctions, where switching of ferroelectric polarization of the tunneling barrier leads to off/on resistance ratios exceeding 104 at room temperature. This talk will discuss physical principles of these phenomena that are promising for nonvolatile and low-power device operation.