Single-crystalline 3C-SiC thin-film on large Si substrate for photonic applications

D. Massoubre, L. Wang, J. Chai, G. Walker, L. Hold, M. Lobino, S. Dimitriev, A. Iacopi
Griffith University, AU

Keywords: 3C-SiC, GaN, photonic, LED on Si, DBR on Si, photonic cristal


We present our recent progress in the hetero-epitaxial growth of single-crystalline cubic silicon carbide (3C-SiC) on large silicon (Si) wafer and its use for photonic applications. Single-crystalline 3C-SiC thin-film on Si opens new opportunities to develop photonic applications on Si, either as a growth template to integrate efficient gallium nitride (GaN)-based optoelectronic devices on Si, as a photonic material to perform ultra-fast (~GHz) electro-optical manipulation of light at telecom wavelengths or even for quantum photonic. We demonstrate the fabrication of 3C-SiC-based DBR on large Si wafer, as well as the growth of GaN-LED on SiC-on-Si.