Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

S. Khandelwal, T.A. Fjeldly
NTNU, NO

Keywords: AlGaN/GaN HEMT, compact modeling

Summary:

We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed previously by our group. We combine Cch model with Meyer capacitance model and develop analytical expressions for CGS and CGD which are valid in all regions of device operation. The proposed model is in excellent agreement with the experimental data.