TechConnectWorld 2011 Conference and Expo TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 Bio Nanotech 2011 TechConnect Summit and Expo 2011

Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-/Metal Gate Bulk FinFETs

H-W Cheng, Y-Y Chiu, Y. Li
National Chiao Tung University, TW

Keywords: high-k/metal gate, work function fluctuation, grain number and position effect, bulk FinFET, 3D device quantum transport simulation

Abstract:

High-/metal gate (HKMG) is one of key technologies for sub-45-nm generations in nano-CMOS era [1-2]. However, using HKMG may introduce random work functions (WKs) on device’s metal gate due to various metal grain orientations [3-5]. In this study, based on experimentally calibrated 3D device simulation [7], WK fluctuation (WKF) of 16 nm TiN/HfO2 gate stack bulk FinFET devices is investigated. The effect of individual WKF in nanosized grain of metal gate on device’s characteristic are captured using localized WKF simulation technique [1], where the random position and number of nanosized metal grains are for the first time modeled and examined. Physical findings on WKF of HKMG devices are discussed accordingly
 
 
Sessions Monday Tuesday Wednesday Thursday Authors Keywords Affiliations Search

TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 BioNanotech 2011 TechConnect Summit 2011
2011 Events | Program | Speaker | Short Courses Sponsor Exhibit/Showcase Press Venue Register
Subscribe | Contact | Site Map
© Copyright 2010 TechConnect World. All Rights Reserved.