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A Phase-Change Random Access Memory Model for Circuit Simulation (invited presentation)

M. Chan
HKUST, HK

Keywords: phase change memory, PCM

Abstract:

A temperature tracking approach has been developed to model the property of phase-change memory (PCM) behavior under input pulses with arbitrary magnitude and shapes. By utilizing the Johnson-Mehl-Avrami equation to monitor the crystal fraction in the phase-change element crystallization process, the resulting resistance of the memory is dynamically calculated. Multi-level memory program and data retention can also be simulated using the proposed method. The model has been implemented in a circuit simulator by Verilog-A and has been verified by experimental data in the literature as well as numerical simulation
 
 
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