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Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type (invited presentation)

M. Miura-Mattausch, M. Miyake, H. Kikuchihara, U. Feldmann, S. Amakawa, H.J. Mattausch
Hiroshima University, JP

Keywords: surface potential, MOSFET family, bulk MOSFET, SOI-MOSFET, MG-MOSFET


Many possible future device structures are investigated in parallel to obtain highest performance features. It has been shown that an SOI-MOSFET with a thin body enables both high device performances and suppression of statistical variations. Another possible approach to facilitate the scaling is to use the third dimension, so that multi-gate MOSFET structures using this approach are becoming attractive. This paper addresses the importance of circuit-simulation models, which are based on device physics and are realized by solving the Poisson equation explicitly. The HiSIM-model family, which covers all structures from bulk MOSFETs to multi-gate MOSFETs, is presented as an example fulfilling these requirements.
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