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Large area transfer of nano-thick single crystal silicon on polymeric substrate

J.-H. Kim, H.-J. Choi, B. Jang, K.-S. Kim, H.-J. Lee, J.-Y. Kim, K.-S. Kim, B.-I. Choi
KIMM(Korea Institute of Machinery & Materials), KR

Keywords: transfer, silicon, flexible electronics


With increasing interest in flexible electronic applications, there is a great need for deposition of semiconducting materials on polymeric substrates. Many researchers have been developing organic or oxide semiconducting materials which can be deposited on a polymeric substrate at a temperature less than its softening temperature. In this study, we chose another approach to manufacture the semiconducting material on a polymeric substrate. Single crystal silicon (SCS) and polyimide are selected as the semiconducting material and the polymeric substrate, respectively. Currently there is no technique for direct deposition of SCS on polymeric substrates while amorphous silicon (a-Si) can be deposited on polymeric substrates under a low temperature, and polysilicon can be formed using laser recrystallization method after a-Si deposition. We made use of transfer assembly technique to manufacture SCS film on polyimide substrate. The transfer assembly technique is nothing but a picking and placing method which is widely utilized in microelectronic packaging industry. SCS films with a thickness of 200 nm and an area of 4 x 4 in2 are transferred onto a polyimide substrate using a transfer assembly system with a conformal stamp, overlay alignment stage, parallelism monitoring sensors, high-speed actuator for stamp movement, and optical inspection module. The geometric effect of conformal stamp on the quality of transferred SCS film is discussed with a help of finite element analysis.
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