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Compact Models for sub-22nm MOSFETs (invited presentation)

Y.S. Chauhan, D. Lu, S. Venugopalan, T. Morshed, M.A. Karim, A. Niknejad, C. Hu
University of California Berkeley, US

Keywords: FinFET, UTBSOI, ETSOI, FDSOI, MOSFET, compact model, BSIM-CMG, BSIM-IMG

Abstract:

FinFET and UTBSOI FET (or ETSOI) are the two promising multi-gate FET candidates for sub-22nm CMOS technology. BSIM multi-gate FET models (BSIM-CMG and BSIM-IMG) are the surface potential based physical compact models for FinFET and UTBSOI FET. BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. BSIM-IMG model has been developed to model independent double gate MOSFET capturing threshold voltage variation with back gate bias. Both models have been verified by TCAD simulation/measurements and show good results for all types of real device effects like SCE, DIBL, Mobility degradation, Poly depletion, QME etc.
 
 
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