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Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

H. Abebe, E. Cumberbatch
USC/ISI, US

Keywords: circuit simulation, compact device modeling, MOSFET, SPICE

Abstract:

We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with numerical results. The compact models are developed based on the graphene material physics using 1-D approximation for circuit simulation application.
 
 
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