TechConnectWorld 2011 Conference and Expo TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 Bio Nanotech 2011 TechConnect Summit and Expo 2011

Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity

J. Xu
Peking University, CN

Keywords: FinFET device, process fluctuation, vertical nonuniformity, performance variation

Abstract:

Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation along the height direction. Therefore, the characteristics, such as threshold voltage, sub-threshold slope, on state current, off state current and total channel resistor are investigated influenced by Fin height and deviation angle. The impact of the deviation angle on both digital and analog circuit performance is also predicted.
 
 
Sessions Monday Tuesday Wednesday Thursday Authors Keywords Affiliations Search

TechConnect World 2011 Nanotech 2011 Clean Technology 2011 Microtech 2011 BioNanotech 2011 TechConnect Summit 2011
2011 Events | Program | Speaker | Short Courses Sponsor Exhibit/Showcase Press Venue Register
Subscribe | Contact | Site Map
© Copyright 2010 TechConnect World. All Rights Reserved.