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An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current

C. Zhang
Peking University, CN

Keywords: interface trap, gate oxide trap, subthreshold current, MOSFET reliability

Abstract:

In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift in the semi-log plotted transfer characteristics, while interface trap influences subthreshold slope of the device. The above theory is verified by ISE-Dessis simulation. The results demonstrate that this method is effective and accurate for extracting parameters of devices with gate length less than 1μm.
 
 
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