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Control of Pore Size in Nanoporous Ultralow Dielectrics

I.Y. Kang, S.H. Song, H.W. Rhee
Sogang University, KR

Keywords: nanoporous ultralow dielectrics, reactive porogen, spin-on dielectric, pore morphologies, mechanical properties


Low dielectric materials have been used as interlayer dielectrics over the years, which has not satisfied the properties required for less than 25 nm devices. One of the most promising approach is the introduction of pores into low-k material. However, the introduction of pores deteriorates mechanical properties while it reduces the dielectric constant. Therefore, it is inevitable to control pore morphologies for ultralow dielectric constant and stronger mechanical properties, We prepared reactive porogens with trimethoxysilyl groups based on β-cyclodextrin (β-CD), glucose (GC), xylitol (XT). These reactive porogens were expected to have condensation reaction between the trimethoxysilyl groups in reactive porogens and silanol groups in matrix. It was expected to minimize phase separation and prevent the porogen molecules from their aggregation during the curing of matrix. The organosilicate matrix was synthesized from the copolymer of methyl trimethoxy silane 75 mol% and 1,2-bis(triethoxysilyl) ethane 25 mol%. Reactive porogen (TMSCD, TMSGC, TMSXT) was chemically modified through allylation and hydrosilylation. The films are prepared by mixing the matrix and porogens whose loadings were from 0 vol% to 60 vol%. We will discuss on the pore sizes in nanoporous dielectric materials along with their mechanical properties.
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