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Variability Study for Silicon Nanowire FETs

Y.-B. Liao, M.-H. Chiang, K. Kim, W.-C. Hsu
National Cheng Kung University, TW

Keywords: nanowire FETs, gate-all-around (GAA), junctionless (JL), SRAM

Abstract:

3-D numerical simulation shows that both the conventional and JL nanowire FETs are sensitive to structural variation whereas the former is more tolerable. Due to more increased Ion/Ioff for lower D and WSi in JL, the proposed SRAM cell can achieve higher RSNM for aggressive technology scaling at/beyond the 14 nm node. This study indicates that process-induced non-idea nanowire structure is not a showstopper in Si-nanowire technologies.
 
 
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