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Combination analysis of the contamination and the plasma in semiconductor dry etcher for optimizing in-situ cleaning

J.H. Lee, S.H. Jang, J.S. Lee, S.H. Lee, J.Y. Kim, M.J. Kim
Univerisity of Texas at Dallas, US

Keywords: plasma, dry-etching, floating harmonic method

Abstract:

Here we are report correlation between etch performance and the contamination of plasma chamber wall. Plasma etching is often plagued with byproducts, reducing etching effectiveness and leaving unwanted residue on the sample surface. Designing a successful chamber cleaning technique to mitigate these effects require a thorough understanding of the etching chemistry, where a reliable and precise assessment of the chamber condition during an ongoing etching run is needed.
 
 
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