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Ultrathin Parylene-C Gate Dielectrics for Flexible Carbon Nanotube Field Effect Transistors

M. Mohebbi, S. Selvarasah, X. Li, B. Beauvais, M.R. Dokmeci
Northeastern University, US

Keywords: Parylene-C dielectric, flexible carbon nanotube field effect transistor


Selection of the proper gate dielectric material is crucial for realizing low voltage nanoelectronic devices specifically in the case of flexible carbon nanotube (CNT) transistors. Polymer dielectrics are heavily utilized in flexible electronics because they are easy and inexpensive to process, compatible with active channel materials (organic semiconductors and CNTs) and metal electrodes, possess excellent insulating properties and have very low leakage currents. Among them, parylene-C has numerous attractive properties. In this work, The adhesion and reliability of thin parylene-C dielectric films are evaluated as a function of stress voltage with different thicknesses using a MIM capacitor structure. The results show that The silane A-174 adhesion promoter improved the metal-parylene stiction and the quality of the film. Accordingly, reproducible dielectric breakdown behavior was observed with increasing stress voltage and resulted in a higher breakdown voltage of 760V compared to untreated films. The dielectric breakdown results suggest that the ultrathin (130nm thick) parylene-C films are pinhole free indicating that submicron parylene-C dielectric films can be readily utilized for ultraflexible, low voltage and high performance TFTs.
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