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Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application

H. Abebe, E. Cumberbatch
USC, US

Keywords: CNTFET, device modeling, device simulation, TCAD

Abstract:

A 2-D channel electrostatic potential model of CNTFET is presented. The model is developed by directly solving Laplace’s equation in cylindrical coordinates with appropriate boundary conditions. To the best of our knowledge, the Technology Computer Aided Design (TCAD) tool vendors have not provided models for CNT devices yet for the purpose of 2-D and 3-D device simulations. We believe the model presented in this paper can be useful for TCAD application.
 
 
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